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| BTW 68 (N) SCR .HI .HI .HI .BTW68 FEATURES GH SURGE CAPABILITY GH ON-STATE CURRENT GH STABILITY AND RELIABILITY Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle,single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter BTW 68 BTW 68 N BTW 68 BTW 68 N Tc=80C Tc=85C Tc=80C Tc=85C tp=8.3 ms tp=10 ms I2t dI/dt Tstg Tj Tl tp=10 ms Value 30 35 19 22 420 400 800 100 - 40 to + 150 - 40 to + 125 230 A2s A/s C C C Unit A A A K A G TOP 3 (Plastic) Symbol Parameter BTW 68 200 400 400 BTW 68 / BTW 68 N 600 600 800 800 1000 1000 1200 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 200 V March 1995 1/5 BTW 68 (N) THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTW 68 BTW 68 N Parameter Value 50 1.1 0.8 Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 s) IFGM = 8A (tp = 20 s) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value BTW 68 IGT VGT VGD tgt VD =12V VD =12V (DC) R L=33 (DC) R L=33 Tj=25C Tj=25C Tj= 125C Tj=25C MAX MAX MIN TYP 50 1.5 0.2 2 BTW 68 N mA V V s mA mA 2.2 0.02 6 MIN 500 250 100 V/s V mA Unit VD =VDRM RL=3.3k VD =VDRM IG = 200mA dIG/dt = 1.5A/s IG= 1.2 IGT IT= 500mA gate open tp= 380s IL IH VTM IDRM IRRM dV/dt Tj=25C Tj=25C Tj=25C Tj=25C Tj= 125C VDRM 800V VDRM 1000V Tj= 125C TYP MAX MAX MAX 2.1 40 75 BTW 68 ITM= 60A BTW 68 N ITM= 70A VDRM VRRM Rated Rated Linear slope up to VD =67%VDRM gate open tq VD =67%VDRM ITM= 60A VR= 75V dITM/dt=30 A/s dVD /dt= 20V/s Tj= 125C TYP s 2/5 BTW 68 (N) Package BTW 68 (Insulated) IT(RMS) A 30 VDRM / VRRM V 200 400 600 800 1000 1200 BTW 68 N (Uninsulated) 35 600 800 1000 1200 Sensitivity Specification BTW X X X X X X X X X X Fig.1 : Maximum average power dissipation versus average on-state current (BTW 68). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68). Fig.3 : Maximum average power dissipation versus average on-state current (BTW 68 N). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 (N) Fig.5 : Average on-state temperature (BTW 68). current versus case Fig.6 : Average on-state temperature (BTW 68 N). current versus case Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp( s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E +3 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10 ms, and corresponding value of I2t. 4/5 BTW 68 (N) Fig11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A R 4.6 I J H DIMENSIONS Millimeters Min. Max. 15.50 21.10 15.60 16.50 4.60 4.17 1.55 0.70 2.90 5.65 1.40 Inches Min. 0.594 0.814 0.561 0.632 0.133 0.173 0.161 0.057 0.019 0.106 0.212 0.047 Max. 0.611 0.831 0.615 0.650 0.182 0.164 0.062 0.028 0.115 0.223 0.056 A B C 15.10 20.70 14.30 16.10 3.40 4.40 4.08 1.45 0.50 2.70 5.40 1.20 G B D D G H I J P L M C L M N P N N Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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